EPITAXIAL STRUCTURE OF SEMICONDUCTOR DEVICE, DEVICE AND METHOD OF MANUFACTURING EPITAXIAL STRUCTURE

The present disclosure relates to an epitaxial structure of a semiconductor device, a device, and a method of manufacturing the epitaxial structure. The epitaxial structure includes a substrate, and a first semiconductor layer, located on the substrate, the first semiconductor layer including buffer...

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Bibliographische Detailangaben
Hauptverfasser:	DU, Xiaoqing, Zhou, Wenlong, ZHANG, Hui, LI, Shiqiang, KONG, Susu, TAN, Kewei
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	The present disclosure relates to an epitaxial structure of a semiconductor device, a device, and a method of manufacturing the epitaxial structure. The epitaxial structure includes a substrate, and a first semiconductor layer, located on the substrate, the first semiconductor layer including buffer layers, the buffer layers at least including a first buffer layer, a second buffer layer, and a third buffer layer which are arranged in layers, and the second buffer layer being located between the first buffer layer and the third buffer layer, wherein the second buffer layer is doped with iron impurities, and the first buffer layer and the third buffer layer are not actively doped with iron impurities, and concentration of iron impurities of the second buffer layer satisfies a first preset range.