IMAGE SENSING DEVICE INCLUDING THROUGH SILICON VIA (TSV) STRUCTURE

IMAGE SENSING DEVICE INCLUDING THROUGH SILICON VIA (TSV) STRUCTURE

An image sensing device includes a semiconductor substrate, an insulation layer disposed below the semiconductor substrate, a through hole formed to extend to the inside of the insulation layer while penetrating the semiconductor substrate, a through silicon via (TSV) structure formed along an inner...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: BAEK, Moung Seok, JEONG, In Chul
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:An image sensing device includes a semiconductor substrate, an insulation layer disposed below the semiconductor substrate, a through hole formed to extend to the inside of the insulation layer while penetrating the semiconductor substrate, a through silicon via (TSV) structure formed along an inner surface of the through hole, and a photoresist formed over the TSV to gap-fill at least a portion of the through hole.