FORMING A DOPED HARDMASK

FORMING A DOPED HARDMASK

Methods for depositing a hardmask with ions implanted at different tilt angles are described herein. By performing ion implantation to dope an amorphous carbon hardmask at multiple tilt angles, an evenly distributed dopant profiled can be created. The implant tilt angle will determine a dopant profi...

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Bibliographische Detailangaben
Hauptverfasser: KITAJIMA, Tomohiko, OSONKIE, Adaeze, BOBEK, Sarah Michelle, WHITESELL, Harry, FALK, Scott, DECKER-LUCKE, Kurt, PRASAD, Rajesh, SHIM, Kyu-Ha
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:Methods for depositing a hardmask with ions implanted at different tilt angles are described herein. By performing ion implantation to dope an amorphous carbon hardmask at multiple tilt angles, an evenly distributed dopant profiled can be created. The implant tilt angle will determine a dopant profile that enhances the carbon hardmask hardness.