EUV MIRROR WITH IMPROVED OPTICAL STABILITY

A heated extreme ultraviolet (EUV) mirror, method of making same, and a projection optics box (POB) of an EUV lithography scanner employing same, are disclosed. The POB includes EUV mirrors disposed inside a vacuum chamber and arranged respective to project an image of a reflective EUV photolithogra...

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Bibliographische Detailangaben
Hauptverfasser:	Lee, Yung-Yao, Chung, Yi-Nong
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY GAMMA RAY OR X-RAY MICROSCOPES HOLOGRAPHY IRRADIATION DEVICES MATERIALS THEREFOR NUCLEAR ENGINEERING NUCLEAR PHYSICS OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR
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Beschreibung
Zusammenfassung:	A heated extreme ultraviolet (EUV) mirror, method of making same, and a projection optics box (POB) of an EUV lithography scanner employing same, are disclosed. The POB includes EUV mirrors disposed inside a vacuum chamber and arranged respective to project an image of a reflective EUV photolithography mask disposed on a reticle stage onto a wafer disposed on a wafer stage. Each EUV mirror of the plurality of EUV mirrors includes a mirror support and an EUV-reflective multilayer disposed on a front side of the mirror support. The plurality of EUV mirrors includes at least one heated EUV mirror that further includes a resistive heater disposed in the mirror support of the heated EUV mirror. In integrated circuit manufacturing, the exposure of a photoresist layer on a semiconductor wafer to EUV light using the POB includes controlling mirror temperature using a heater embedded in the EUV mirror.