SEMICONDUCTOR DEVICE INCLUDING TRENCH STRUCTURE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

A semiconductor device includes a substrate including a gate electrode therein, a trench penetrating the gate electrode and arranged in the substrate, a gate insulating layer in the trench and an upper surface of the substrate, a channel layer on the gate insulating layer and including a two-dimensi...

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Hauptverfasser:	Yoo, Minseok, Shin, Keunwook, Seol, Minsu, KWON, Junyoung
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	Yoo, Minseok Shin, Keunwook Seol, Minsu KWON, Junyoung
description	A semiconductor device includes a substrate including a gate electrode therein, a trench penetrating the gate electrode and arranged in the substrate, a gate insulating layer in the trench and an upper surface of the substrate, a channel layer on the gate insulating layer and including a two-dimensional (2D) semiconductor material, and a source electrode and a drain electrode, which are spaced apart from each other on the channel layer.
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	SEMICONDUCTOR DEVICE INCLUDING TRENCH STRUCTURE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
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