SEMICONDUCTOR DEVICE INCLUDING TRENCH STRUCTURE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE INCLUDING TRENCH STRUCTURE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

A semiconductor device includes a substrate including a gate electrode therein, a trench penetrating the gate electrode and arranged in the substrate, a gate insulating layer in the trench and an upper surface of the substrate, a channel layer on the gate insulating layer and including a two-dimensi...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Yoo, Minseok, Shin, Keunwook, Seol, Minsu, KWON, Junyoung
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device includes a substrate including a gate electrode therein, a trench penetrating the gate electrode and arranged in the substrate, a gate insulating layer in the trench and an upper surface of the substrate, a channel layer on the gate insulating layer and including a two-dimensional (2D) semiconductor material, and a source electrode and a drain electrode, which are spaced apart from each other on the channel layer.