SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING SAME

To suppress deterioration of imaging characteristics. A solid-state imaging device includes a photoelectric conversion section provided inside a semiconductor substrate, the photoelectric conversion section being configured to generate electric charges in accordance with an amount of received light, a plurality of vertical transfer gates arranged between the photoelectric conversion section and one principal surface of the semiconductor substrate in a depth direction of the semiconductor substrate and spaced apart from each other in a direction along a substrate surface of the semiconductor substrate, the plurality of vertical transfer gates each being configured to control transfer of the electric charges generated by the photoelectric conversion section, and an electric charge storage section disposed between the plurality of vertical transfer gates, the electric charge storage section being configured to store the electric charges transferred by the plurality of vertical transfer gates.