STACKED VERTICAL TRANSPORT FIELD-EFFECT TRANSISTOR LOGIC GATE STRUCTURES WITH SHARED EPITAXIAL LAYERS

STACKED VERTICAL TRANSPORT FIELD-EFFECT TRANSISTOR LOGIC GATE STRUCTURES WITH SHARED EPITAXIAL LAYERS

A semiconductor structure comprises two or more vertical fins, a bottom epitaxial layer surrounding a bottom portion of a given one of the two or more vertical fins, a top epitaxial layer surrounding a top portion of the given one of the two or more vertical fins, a shared epitaxial layer surroundin...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Rahman, Ardasheir, Li, Tao, Fan, Su Chen, Kang, Tsung-Sheng
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PULSE TECHNIQUE
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor structure comprises two or more vertical fins, a bottom epitaxial layer surrounding a bottom portion of a given one of the two or more vertical fins, a top epitaxial layer surrounding a top portion of the given one of the two or more vertical fins, a shared epitaxial layer surrounding a middle portion of the given one of the two or more vertical fins, and a connecting layer contacting the bottom epitaxial layer and the top epitaxial layer, the connecting layer being disposed to a lateral side of the two or more vertical fins.