LATERALLY-DIFFUSED METAL-OXIDE-SEMICONDUCTOR DEVICES WITH A FIELD PLATE

Structures for a laterally-diffused metal-oxide-semiconductor device and methods of forming a structure for a laterally-diffused metal-oxide-semiconductor device. The structure comprises a semiconductor substrate including a first well, a second well positioned within the first well, a source region positioned in the first well, and a drain region positioned in the second well. The first well has a first conductivity type, and the second well, the source region, and the drain region have a second conductivity type opposite to the first conductivity type. The structure further comprises a field plate over the semiconductor substrate and a contact connecting the field plate to the drain region. The field plate is positioned to overlap with the drain region and with a portion of the second well adjacent to the drain region. The contact and the field plate comprise the same metal.