SEMICONDUCTOR DEVICE

Provided is a semiconductor device in which each of a transistor portion and a diode portion has one or more trench contact portions provided from an upper surface of a semiconductor substrate in a depth direction of the semiconductor substrate, the transistor portion has a first bottom region of a...

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Bibliographische Detailangaben
1. Verfasser:	NAITO, Tatsuya
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	Provided is a semiconductor device in which each of a transistor portion and a diode portion has one or more trench contact portions provided from an upper surface of a semiconductor substrate in a depth direction of the semiconductor substrate, the transistor portion has a first bottom region of a second conductivity type provided in contact with a bottom of any one of the one or more trench contact portions, the diode portion has a second bottom region of the second conductivity type provided in contact with a bottom of any one of the one or more trench contact portions, and a length of the first bottom region in the extending direction is larger than a length of the second bottom region in the extending direction.