LIGHT IRRADIATION TYPE HEAT TREATMENT APPARATUS

Provided is a flash heating part including a plurality of flash lamps on an upper side of a chamber housing a semiconductor wafer, and also provided is an auxiliary heating part including a plurality of VCSELs (vertical cavity surface emitting lasers) on a lower side thereof. After the semiconductor wafer is preheated by light irradiation from the VCSELs, a front surface of the semiconductor wafer is irradiated with a flash of light from the flash lamps to instantaneously increase a temperature of the surface thereof. The VCSELs can emit light having relatively higher intensity than the LEDs. Thus, when light irradiation from the plurality of VCSELs is performed, intensity of light emitted to the substrate can also be increased, and the semiconductor wafer can be efficiently heated.