ETCHING METHOD AND ETCHING APPARATUS

ETCHING METHOD AND ETCHING APPARATUS

An etching method includes: providing, to an interior of a chamber, a substrate having a three-layered film formed by stacking a first silicon oxide-based film, a silicon nitride-based film, and a second silicon oxide-based film; and collectively etching the three-layered film using a HF-NH3-based g...

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Bibliographische Detailangaben
Hauptverfasser: ASAHI, Kenshiro, SASAHARA, Reiko, JEUNG, Woonghyun, OKUMURA, Teppei, ABE, Hiroyuki, DEBARI, Toshinori, KIM, Seungmin
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:An etching method includes: providing, to an interior of a chamber, a substrate having a three-layered film formed by stacking a first silicon oxide-based film, a silicon nitride-based film, and a second silicon oxide-based film; and collectively etching the three-layered film using a HF-NH3-based gas in the interior of the chamber while adjusting a gas ratio in each of the first silicon oxide-based film, the silicon nitride-based film, and the second silicon oxide-based film.