STORAGE ELEMENT AND STORAGE APPARATUS

A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains...

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Bibliographische Detailangaben
Hauptverfasser:	Ohmori, Hiroyuki, Asayama, Tetsuya, Higo, Yutaka, Bessho, Kazuhiro, Uchida, Hiroyuki, Yamane, Kazutaka, Hosomi, Masanori
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRICITY INDUCTANCES INFORMATION STORAGE INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER MAGNETS PHYSICS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES STATIC STORES TRANSFORMERS
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Beschreibung
Zusammenfassung:	A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween. This configuration may effectively prevent divergence of magnetization reversal time due to directions of magnetization of the storage layer and the magnetization fixed layer being substantially parallel or antiparallel, reduce write errors, and enable writing operation in a short time.