HIGH-MOBILITY-ELECTRON TRANSISTORS HAVING HEAT DISSIPATING STRUCTURES

HIGH-MOBILITY-ELECTRON TRANSISTORS HAVING HEAT DISSIPATING STRUCTURES

A semiconductor device is provided. The semiconductor device includes a substrate, a semiconductor layer, a device layer, and heat dissipating structures. The semiconductor layer is over the substrate and the device layer is over the semiconductor layer. The device layer includes a first ohmic conta...

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Bibliographische Detailangaben
Hauptverfasser: RASSEL, RICHARD, HAZBUN, RAMSEY, KRISHNASAMY, RAJENDRAN, KANTAROVSKY, JOHNATAN AVRAHAM, HE, ZHONG-XIANG, ABOU-KHALIL, MICHEL
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device is provided. The semiconductor device includes a substrate, a semiconductor layer, a device layer, and heat dissipating structures. The semiconductor layer is over the substrate and the device layer is over the semiconductor layer. The device layer includes a first ohmic contact and a second ohmic contact. The heat dissipating structures are at least through the substrate and the semiconductor layer, and between the first ohmic contact and the second ohmic contact.