SUBSTRATE FOR MASK BLANKS AND METHOD FOR MANUFACTURING THE SAME

A substrate for mask blanks having first and second main surfaces of 152 mm×152 mm square and a thickness of 6.35 mm, wherein: when a range of 132 mm×132 mm square centered on an intersection of diagonal lines is defined as a calculation region in each of the first and second main surfaces, on a sub...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	TAKEUCHI, Masaki, SUGIYAMA, Tomoaki, HARADA, Daijitsu, MATSUI, Harunobu, YARITA, Naoki
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A substrate for mask blanks having first and second main surfaces of 152 mm×152 mm square and a thickness of 6.35 mm, wherein: when a range of 132 mm×132 mm square centered on an intersection of diagonal lines is defined as a calculation region in each of the first and second main surfaces, on a substrate surface of the calculation region of at least one of the first and second main surfaces, flatness of the substrate surface of the calculation region based on a least square plane is 100 nm or less, and a difference (PV) between a highest value and a lowest value of a height of a calculation surface represented by a difference between shapes of the substrate surfaces before and after smoothing processing with a Gaussian filter (10 mm×10 mm) based on the least square plane is 20 nm or less.