DEVICE FOR DRIVING TRANSISTORS AND METHOD OF DRIVING

An FDSOI transistor control device includes a plurality of first wells having a first type of conductivity, each first well being associated with a group of transistors, and at least one second well having a second type of conductivity, formed under and around the first wells (21). A bias circuit is...

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Bibliographische Detailangaben
Hauptverfasser: GIRAUD, Bastien, MOURSY, Yasser, ANDRIEU, François
Format: Patent
Sprache:eng
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Zusammenfassung:An FDSOI transistor control device includes a plurality of first wells having a first type of conductivity, each first well being associated with a group of transistors, and at least one second well having a second type of conductivity, formed under and around the first wells (21). A bias circuit is configured to apply at least one first bias voltage to the first wells and at least one second bias voltage to at least one second well. All of the transistors may have the second type of conductivity.