OVERLAY MEASURING METHOD AND SEMICONDUCTOR DEVICE FABRICATED USING THE SAME

OVERLAY MEASURING METHOD AND SEMICONDUCTOR DEVICE FABRICATED USING THE SAME

A semiconductor device includes a substrate having a key region, a dummy active pattern on the key region, the dummy active pattern including a first impurity region and a second impurity region, a line structure provided on the first impurity region and extended in a first direction, a dummy gate e...

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Bibliographische Detailangaben
Hauptverfasser: KIM, Nanhyung, KWAK, Inho, PARK, Dohyeon, HAN, Yeeun, YUN, Sang-Ho, LEE, Seungyoon, LEE, Moosong, KIM, Jinsun
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A semiconductor device includes a substrate having a key region, a dummy active pattern on the key region, the dummy active pattern including a first impurity region and a second impurity region, a line structure provided on the first impurity region and extended in a first direction, a dummy gate electrode provided between the first and second impurity regions and extended in a second direction crossing the first direction, and a dummy contact disposed adjacent to a side of the line structure and connected to the second impurity region. The dummy contact includes a plurality of long contacts arranged in the second direction.