AIR GAP WITH INVERTED T-SHAPED LOWER PORTION EXTENDING THROUGH AT LEAST ONE METAL LAYER, AND RELATED METHOD

AIR GAP WITH INVERTED T-SHAPED LOWER PORTION EXTENDING THROUGH AT LEAST ONE METAL LAYER, AND RELATED METHOD

Methods of forming semiconductor devices including an air gap extending through at least one metal layer, and the semiconductor device so formed, are disclosed. The air gap has a lower portion that contacts a silicide layer over a gate body of a transistor gate and has an inverted T-shape over the g...

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Hauptverfasser: Yin, Shucheng, Hsieh, Curtis Chun-I, Yi, Wanbing, Lin, Kemao, Toh, Rui Tze, Shao, Yanxia, Chong, Yung Fu, Deng, Wensheng, Wong, Jason Kin Wei, Xinfu, Liu
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Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Yin, Shucheng
Hsieh, Curtis Chun-I
Yi, Wanbing
Lin, Kemao
Toh, Rui Tze
Shao, Yanxia
Chong, Yung Fu
Deng, Wensheng
Wong, Jason Kin Wei
Xinfu, Liu
description Methods of forming semiconductor devices including an air gap extending through at least one metal layer, and the semiconductor device so formed, are disclosed. The air gap has a lower portion that contacts a silicide layer over a gate body of a transistor gate and has an inverted T-shape over the gate body. The air gap reduces the capacitance between a transistor gate in a device layer and adjacent wires and vias used to contact the source and drain of the transistor.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title AIR GAP WITH INVERTED T-SHAPED LOWER PORTION EXTENDING THROUGH AT LEAST ONE METAL LAYER, AND RELATED METHOD
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