AIR GAP WITH INVERTED T-SHAPED LOWER PORTION EXTENDING THROUGH AT LEAST ONE METAL LAYER, AND RELATED METHOD

AIR GAP WITH INVERTED T-SHAPED LOWER PORTION EXTENDING THROUGH AT LEAST ONE METAL LAYER, AND RELATED METHOD

Methods of forming semiconductor devices including an air gap extending through at least one metal layer, and the semiconductor device so formed, are disclosed. The air gap has a lower portion that contacts a silicide layer over a gate body of a transistor gate and has an inverted T-shape over the g...

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Bibliographische Detailangaben
Hauptverfasser: Yin, Shucheng, Hsieh, Curtis Chun-I, Yi, Wanbing, Lin, Kemao, Toh, Rui Tze, Shao, Yanxia, Chong, Yung Fu, Deng, Wensheng, Wong, Jason Kin Wei, Xinfu, Liu
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Methods of forming semiconductor devices including an air gap extending through at least one metal layer, and the semiconductor device so formed, are disclosed. The air gap has a lower portion that contacts a silicide layer over a gate body of a transistor gate and has an inverted T-shape over the gate body. The air gap reduces the capacitance between a transistor gate in a device layer and adjacent wires and vias used to contact the source and drain of the transistor.