METHOD FOR IMPROVING PROFILE OF INTERCONNECT STRUCTURE

A method for manufacturing a semiconductor device includes: forming a patterned dielectric layer over a substrate, the patterned dielectric layer including an interconnect opening having a sidewall surface and a bottom surface; and forming a doped film by an opening-adjustment process, the doped fil...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LIAN, Jian-Jou, LIN, Chun-Neng, CHEN, Chieh-Wei
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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