METHOD FOR IMPROVING PROFILE OF INTERCONNECT STRUCTURE

METHOD FOR IMPROVING PROFILE OF INTERCONNECT STRUCTURE

A method for manufacturing a semiconductor device includes: forming a patterned dielectric layer over a substrate, the patterned dielectric layer including an interconnect opening having a sidewall surface and a bottom surface; and forming a doped film by an opening-adjustment process, the doped fil...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: LIAN, Jian-Jou, LIN, Chun-Neng, CHEN, Chieh-Wei
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method for manufacturing a semiconductor device includes: forming a patterned dielectric layer over a substrate, the patterned dielectric layer including an interconnect opening having a sidewall surface and a bottom surface; and forming a doped film by an opening-adjustment process, the doped film being disposed on the patterned dielectric layer and extending into the interconnect opening to cover an upper portion of the sidewall surface, so as to adjust a profile of the interconnect opening.