EQUIPMENT AND PROCESS TECHNOLOGIES FOR CATALYST INFLUENCED CHEMICAL ETCHING
A method and system for etching a semiconductor substrate using catalyst influenced chemical etching. A group of independently controlled discrete actuators are configured to control a depth of an etch of a material on a substrate, where at least two of the group of independently controlled discrete...
Gespeichert in:
Hauptverfasser: | , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | A method and system for etching a semiconductor substrate using catalyst influenced chemical etching. A group of independently controlled discrete actuators are configured to control a depth of an etch of a material on a substrate, where at least two of the group of independently controlled discrete actuators has distinct actuation values. Furthermore, the etch depth has a variation of less than 10% of a feature height across the substrate. |
---|