PLASMA TREATMENT DEVICE
A plasma treatment device according to the present disclosure comprises a chamber, a gas supply part, a substrate support part, a ground electrode, an upper electrode, first and second high frequency power sources, and a rectifier. The gas supply part supplies a gas into the chamber. The substrate s...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A plasma treatment device according to the present disclosure comprises a chamber, a gas supply part, a substrate support part, a ground electrode, an upper electrode, first and second high frequency power sources, and a rectifier. The gas supply part supplies a gas into the chamber. The substrate support part is provided inside the chamber. The ground electrode is provided inside the chamber. The upper electrode is provided above the substrate support part and the ground electrode. The first high frequency power source is electrically connected to the upper electrode in order to generate plasma in the chamber from the gas. The second high frequency power source is electrically connected to the upper electrode. The rectifier blocks the application of a negative voltage to the upper electrode by the second high frequency power source. |
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