DAMASCENE MRAM DEVICE

A magnetic tunnel junction (MTJ) stack, a vertical side surface of the MTJ stack includes a saw tooth edge, the MTJ stack includes vertically aligned layers of a top electrode, a free layer, a tunneling barrier, a reference layer and a bottom electrode, the free layer of the MTJ stack has a tapered edge including a first width at an upper portion of the free layer and a second width at a lower portion of the free layer, the first width is greater than the second width. Forming a first bottom electrode of a first MTJ stack, a second bottom electrode of a second MTJ stack, a first inter-layer dielectric between the first and the second bottom electrode, a first reference layer of the first MTJ stack, a second reference layer of the second MTJ stack, a second inter-layer dielectric between the first reference layer and the second reference layer.