THREE DIMENSIONAL (3D) MEMORY DEVICE AND FABRICATION METHOD

THREE DIMENSIONAL (3D) MEMORY DEVICE AND FABRICATION METHOD

Three-dimensional (3D) NAND memory devices and methods are provided. A fabrication method includes forming a semiconductor layer over a substrate, forming an opening that extends partially through the semiconductor layer, depositing a first stack layer and a second stack layer that are alternately s...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: GAO, Jing, LIU, Jing, LI, Zhaosong, SHAN, Chuanhai, LU, Zhouyang
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Three-dimensional (3D) NAND memory devices and methods are provided. A fabrication method includes forming a semiconductor layer over a substrate, forming an opening that extends partially through the semiconductor layer, depositing a first stack layer and a second stack layer that are alternately stacked over a sidewall of the opening and over the semiconductor layer, and filling the opening with a dielectric material to form an alignment mark.