3D Embedded Redistribution Layers for IC Substrate Packaging
Improved redistribution layer structures for integrated circuit or system-on-chip (SoC) packages substrate are disclosed. Via landing pads and via interconnects in the redistribution layers are self-aligning with the centers of the vias aligning with the pads. This self-alignment may allow pads that...
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creator | Mesch, Ryan Hsu, Jun Chung |
description | Improved redistribution layer structures for integrated circuit or system-on-chip (SoC) packages substrate are disclosed. Via landing pads and via interconnects in the redistribution layers are self-aligning with the centers of the vias aligning with the pads. This self-alignment may allow pads that terminate non-stacked vias to have decreased widths or diameters without extra capture space. The redistribution layers have vias with vertical or near vertical sidewalls. Vias may also have various shapes, widths, or lengths. Traces in the redistribution layers may have various lengths and shapes with lengths that may extend into layers routing the vias to provide increased metal density in the traces. |
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Via landing pads and via interconnects in the redistribution layers are self-aligning with the centers of the vias aligning with the pads. This self-alignment may allow pads that terminate non-stacked vias to have decreased widths or diameters without extra capture space. The redistribution layers have vias with vertical or near vertical sidewalls. Vias may also have various shapes, widths, or lengths. Traces in the redistribution layers may have various lengths and shapes with lengths that may extend into layers routing the vias to provide increased metal density in the traces.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231214&DB=EPODOC&CC=US&NR=2023402390A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231214&DB=EPODOC&CC=US&NR=2023402390A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Mesch, Ryan</creatorcontrib><creatorcontrib>Hsu, Jun Chung</creatorcontrib><title>3D Embedded Redistribution Layers for IC Substrate Packaging</title><description>Improved redistribution layer structures for integrated circuit or system-on-chip (SoC) packages substrate are disclosed. Via landing pads and via interconnects in the redistribution layers are self-aligning with the centers of the vias aligning with the pads. This self-alignment may allow pads that terminate non-stacked vias to have decreased widths or diameters without extra capture space. The redistribution layers have vias with vertical or near vertical sidewalls. Vias may also have various shapes, widths, or lengths. 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Via landing pads and via interconnects in the redistribution layers are self-aligning with the centers of the vias aligning with the pads. This self-alignment may allow pads that terminate non-stacked vias to have decreased widths or diameters without extra capture space. The redistribution layers have vias with vertical or near vertical sidewalls. Vias may also have various shapes, widths, or lengths. Traces in the redistribution layers may have various lengths and shapes with lengths that may extend into layers routing the vias to provide increased metal density in the traces.</abstract><oa>free_for_read</oa></addata></record> |
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title | 3D Embedded Redistribution Layers for IC Substrate Packaging |
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