INSULATED GATE BIPOLAR TRANSISTOR

Provided is an insulated gate bipolar transistor including: a base region which is provided between an emitter region and a drift region; an accumulation region which is provided between a base region and a drift region, and which has a doping concentration higher than that of the drift region; a ga...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HAMASAKI, Ryutaro, YAMADA, Takuya, NOGUCHI, Seiji, SAKURAI, Yosuke, OZAKI, Daisuke
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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