INSULATED GATE BIPOLAR TRANSISTOR

Provided is an insulated gate bipolar transistor including: a base region which is provided between an emitter region and a drift region; an accumulation region which is provided between a base region and a drift region, and which has a doping concentration higher than that of the drift region; a ga...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	HAMASAKI, Ryutaro, YAMADA, Takuya, NOGUCHI, Seiji, SAKURAI, Yosuke, OZAKI, Daisuke
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Provided is an insulated gate bipolar transistor including: a base region which is provided between an emitter region and a drift region; an accumulation region which is provided between a base region and a drift region, and which has a doping concentration higher than that of the drift region; a gate trench portion which is provided from an upper surface of a semiconductor substrate to a portion below the accumulation region; and a lower end region which is provide to be in contact with a lower end of the gate trench portion; wherein the accumulation region has a first concentration peak in which the doping concentration indicates a maximum value in a depth direction, and a distance between the first concentration peak and the lower end region in a depth direction is less than a distance between the first concentration peak and the base region in the depth direction.