MICROELECTRONIC DEVICES INCLUDING STACK STRUCTURES HAVING DOPED INTERFACIAL REGIONS, AND RELATED SYSTEMS AND METHODS

MICROELECTRONIC DEVICES INCLUDING STACK STRUCTURES HAVING DOPED INTERFACIAL REGIONS, AND RELATED SYSTEMS AND METHODS

A microelectronic device comprises conductive structures and insulative structures vertically alternating with the conductive structures. At least one of the insulative structures includes interfacial regions extending inward from vertical boundaries of the at least one of the insulative structures,...

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Bibliographische Detailangaben
Hauptverfasser: Good, Farrell M, Liu, Naiming, Shepherdson, Justin D, Meldrim, John M, McTeer, Everett A, Greenlee, Jordan D, Liu, Yifen
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A microelectronic device comprises conductive structures and insulative structures vertically alternating with the conductive structures. At least one of the insulative structures includes interfacial regions extending inward from vertical boundaries of the at least one of the insulative structures, and central region vertically interposed between the interfacial regions. The interfacial regions are doped with one or more of carbon and boron. The insulative structures comprise a lower concentration of the one or more of carbon and boron than the interfacial regions. Additional microelectronic devices, electronic systems, and methods are also described.