SiC SUBSTRATE AND SiC EPITAXIAL WAFER

SiC SUBSTRATE AND SiC EPITAXIAL WAFER

The SiC substrate has a warpage factor F of 300 μm or less, which is obtained from the thickness, the diameter, and a stress at a first outer circumferential end 10 mm inward from an outer circumferential end in the [11-20] direction from a center thereof.

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Bibliographische Detailangaben
Hauptverfasser: SUO, Hiromasa, KINDAICHI, Rimpei
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The SiC substrate has a warpage factor F of 300 μm or less, which is obtained from the thickness, the diameter, and a stress at a first outer circumferential end 10 mm inward from an outer circumferential end in the [11-20] direction from a center thereof.