ETCHANT COMPOSITION AND METHOD

Compositions and methods for selectively etching titanium nitride, cobalt, or a combination thereof. The compositions and methods generally leave molybdenum and other materials present unaffected by the process. The process can achieve a high etching rate, and can provide uniform recess top and bott...

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Bibliographische Detailangaben
Hauptverfasser: Hong, SeongJin, Hong, Hyungpyo, Yeo, Juhee, Kim, WonLae, Yang, JeongYeol
Format: Patent
Sprache:eng
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Zusammenfassung:Compositions and methods for selectively etching titanium nitride, cobalt, or a combination thereof. The compositions and methods generally leave molybdenum and other materials present unaffected by the process. The process can achieve a high etching rate, and can provide uniform recess top and bottom layers in patterns.