BILAYER ENCAPSULATION OF A MEMORY CELL

BILAYER ENCAPSULATION OF A MEMORY CELL

A memory device comprising a memory cell comprising a storage element including a phase change memory; and a bilayer formed on a first side and a second side of the memory cell, the bilayer including an inner layer comprising a first nitride and an outer layer comprising a second nitride.

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Bibliographische Detailangaben
Hauptverfasser: Fryauf, David M, Ryan, Errol Todd, Chong, Kyuchul, Sun, Zhiguo
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A memory device comprising a memory cell comprising a storage element including a phase change memory; and a bilayer formed on a first side and a second side of the memory cell, the bilayer including an inner layer comprising a first nitride and an outer layer comprising a second nitride.