MEMORY DEVICE INCLUDING PHASE-CHANGE MATERIAL

A memory device including a phase-change material includes: a substrate; a first memory cell including a first selection layer and a first phase-change material layer, and a second memory cell including a second selection layer and a second phase-change material layer, wherein the first memory cell and the second memory cell are arranged apart from each other with an insulating layer therebetween in a normal direction of the substrate, wherein the first phase-change material layer and the second phase-change material layer include: a first layer including a thermal confinement material; and a second layer including a phase-change material, respectively, wherein the first layer and the second layer extend in a direction vertical to the substrate, and wherein the first phase-change material layer is physically isolated from the second phase-change material layer by the insulating layer.