TECHNIQUES FOR HEAT DISPERSION IN 3D INTEGRATED CIRCUIT

A first die includes a first substrate and a first interconnect structure. A second die is bonded to the first die and includes a second substrate and a second interconnect structure, such that the first and second interconnect structures are arranged between the first and second substrates. A redis...

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Bibliographische Detailangaben
Hauptverfasser: Ong, Yi Ching, Huang, Chien Ta, Tsai, Chun-Yang, Chuang, Harry-Hak-Lay, Huang, Kuo-Ching
Format: Patent
Sprache:eng
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Zusammenfassung:A first die includes a first substrate and a first interconnect structure. A second die is bonded to the first die and includes a second substrate and a second interconnect structure, such that the first and second interconnect structures are arranged between the first and second substrates. A redistribution layer (RDL) stack is arranged on an outer side of the first die opposite the first interconnect structure. A heat path includes a through substrate via (TSV) extending from a conductive layer in the first interconnect structure, through the first substrate, and into the RDL stack. An RDL dielectric material is included in the RDL stack and separates the heat path from an ambient environment. A thermal conductivity of the RDL dielectric is over twenty times a thermal conductivity of an interconnect dielectric material of the first interconnect structure or of the second interconnect structure.