SEMICONDUCTOR MEMORY DEVICES

A semiconductor memory device comprises a substrate, a first conductive line extending in a first direction on the substrate, a second conductive line extending in a second direction on the first conductive line, a memory cell between the first and the second conductive lines, and a spacer covering...

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Bibliographische Detailangaben
Hauptverfasser: PAEK, Jong Hyun, PARK, Kyu Dong, SONG, Seul Ji
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:A semiconductor memory device comprises a substrate, a first conductive line extending in a first direction on the substrate, a second conductive line extending in a second direction on the first conductive line, a memory cell between the first and the second conductive lines, and a spacer covering a part of a side wall of the memory cell, wherein the memory cell includes a first electrode connected to the first conductive line, a second electrode connected to the second conductive line, and an information storage pattern between the first and second electrodes, wherein the spacer covers a side wall of the information storage pattern and a side wall of the second electrode, but not side walls of the first electrode, and the first electrode is wider than the information storage pattern at a portion on which the first electrode and the information storage pattern contact to each other.