Integrated Circuitry, Array Of Cross-Point Memory Cells, Method Used In Forming Integrated Circuitry

Integrated circuitry comprises a horizontally-elongated insulative wall directly above a conductive node. The wall comprises insulative material. A conductive via extends through the wall to the conductive node. A conductive line is directly above the wall and directly above the conductive via. The conductive via directly electrically couples together the conductive line with the conductive node. Insulator material is longitudinally-along laterally-opposing sides of the wall. An interface of the insulative material of the wall and the insulator material are on each of the laterally-opposing sides of the wall. Other embodiments, including method, are disclosed.