SEMICONDUCTOR MEMORY STRUCTURE

A method includes receiving a workpiece. The workpiece includes a first dummy gate, a second dummy gate adjacent the first dummy gate, a first gate spacer disposed along sidewalls of the first dummy gate, and a second gate spacer disposed along sidewalls of the second dummy gate. The method further includes removing the first dummy gate and the second dummy gate to form a first gate trench and a second gate trench, respectively, enlarging the first gate trench and the second gate trench, forming a first metal gate structure in the enlarged first gate trench, and forming a second metal gate structure in the enlarged second gate trench. The enlarged second gate trench is wider than the enlarged first gate trench.