MULTI-LAYERED SOURCE AND DRAIN CONTACTS FOR A THIN FILM TRANSISTOR (TFT) STRUCTURE
Techniques for forming thin film transistors (TFTs) having multilayer contact structures. An example integrated circuit includes a gate electrode, a gate dielectric on the gate electrode, a semiconductor region on the gate dielectric, and a conductive contact that contacts at least a portion of the...
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| creator | Lajoie, Travis W Chen, Albert B Le, Van H Venkatraman, Vishak Armstrong, Mark Sharma, Abhishek Anil Sultana, Afrin Taneja, Deepyanti Dolejsi, Moshe Baloch, Kamal H Jen, Timothy Madisetti, Shailesh Kumar |
| description | Techniques for forming thin film transistors (TFTs) having multilayer contact structures. An example integrated circuit includes a gate electrode, a gate dielectric on the gate electrode, a semiconductor region on the gate dielectric, and a conductive contact that contacts at least a portion of the semiconductor region. In some other cases, the conductive contact comprises a multilayer structure having at least a first material layer on the at least a portion of the semiconductor region, at least a second material layer on the first material layer, and a conductive fill material over the first and second material layers. In some other cases, the conductive contact comprises a multilayer structure having (1) a graded material layer on the at least a portion of the semiconductor region and (2) a conductive fill material over the graded material layer, wherein the graded material layer comprises a concentration gradient of a given element. |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | MULTI-LAYERED SOURCE AND DRAIN CONTACTS FOR A THIN FILM TRANSISTOR (TFT) STRUCTURE |
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