MULTI-LAYERED SOURCE AND DRAIN CONTACTS FOR A THIN FILM TRANSISTOR (TFT) STRUCTURE

Techniques for forming thin film transistors (TFTs) having multilayer contact structures. An example integrated circuit includes a gate electrode, a gate dielectric on the gate electrode, a semiconductor region on the gate dielectric, and a conductive contact that contacts at least a portion of the...

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Bibliographische Detailangaben
Hauptverfasser:	Lajoie, Travis W, Chen, Albert B, Le, Van H, Venkatraman, Vishak, Armstrong, Mark, Sharma, Abhishek Anil, Sultana, Afrin, Taneja, Deepyanti, Dolejsi, Moshe, Baloch, Kamal H, Jen, Timothy, Madisetti, Shailesh Kumar
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	Techniques for forming thin film transistors (TFTs) having multilayer contact structures. An example integrated circuit includes a gate electrode, a gate dielectric on the gate electrode, a semiconductor region on the gate dielectric, and a conductive contact that contacts at least a portion of the semiconductor region. In some other cases, the conductive contact comprises a multilayer structure having at least a first material layer on the at least a portion of the semiconductor region, at least a second material layer on the first material layer, and a conductive fill material over the first and second material layers. In some other cases, the conductive contact comprises a multilayer structure having (1) a graded material layer on the at least a portion of the semiconductor region and (2) a conductive fill material over the graded material layer, wherein the graded material layer comprises a concentration gradient of a given element.