NOISE REDUCTION IN SILICON-ON-INSULATOR DEVICES

Disclosed is silicon on insulator (SOI) radio frequency (RF) module with noise reduction shielding to mitigate radio frequency interference (RFI) between active circuit devices within the module. The RF module includes various semiconductor active devices disposed upon an insulating substrate. The R...

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Bibliographische Detailangaben
Hauptverfasser: Srirattana, Nuttapong, Alampoondi Venkatesan, Lakshminarayanan, Roy, Ambarish, Gulezian, II, Richard Peter
Format: Patent
Sprache:eng
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Zusammenfassung:Disclosed is silicon on insulator (SOI) radio frequency (RF) module with noise reduction shielding to mitigate radio frequency interference (RFI) between active circuit devices within the module. The RF module includes various semiconductor active devices disposed upon an insulating substrate. The RF module can be a front-end module (FEM) with one or more charge pumps as active devices. A polysilicon web extends between and underneath the devices to create a network of ground paths across a surface of the insulating substrate. The ground paths effectively conduct RF noise to a circuit ground, causing the polysilicon ground web to eliminate or substantially attenuate RFI produced by the active devices without altering signal characteristics of the RF module. The disclosed solution also reduces RF noise leakage into the substrate, and can reduce RFI between neighboring RF modules.