INTEGRATED CIRCUIT STRUCTURE WITH RESISTIVE SEMICONDUCTOR MATERIAL FOR BACK WELL

Embodiments of the disclosure provide an integrated circuit (IC) structure with resistive semiconductor material for a back well. The IC structure may include a semiconductor substrate having a deep well, and a device within a first portion of the deep well. The device includes a first doped semicon...

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Bibliographische Detailangaben
Hauptverfasser: Krishnasamy, Rajendran, Dutta, Anupam, Gauthier, JR., Robert J, Nath, Anindya, Choppalli, Satyasuresh Vvss, Lin, Lin, Lu, Xiangxiang
Format: Patent
Sprache:eng
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