INTEGRATED CIRCUIT STRUCTURE WITH RESISTIVE SEMICONDUCTOR MATERIAL FOR BACK WELL

Embodiments of the disclosure provide an integrated circuit (IC) structure with resistive semiconductor material for a back well. The IC structure may include a semiconductor substrate having a deep well, and a device within a first portion of the deep well. The device includes a first doped semiconductor material coupled to a first contact, and a second doped semiconductor material coupled to a second contact. The deep well couples the first doped semiconductor material to the second doped semiconductor material. A first back well is within a second portion of the deep well. A first resistive semiconductor material is within the deep well and defines a boundary between the first portion of the deep well and the second portion of the deep well.