HIGH ELECTRON MOBILITY TRANSISTOR DEVICE AND METHOD OF MAKING THE SAME

An HEMT device includes a substrate, a buffer layer, a channel layer, and a barrier layer sequentially disposed in such order; a source electrode and a drain electrode disposed oppositely on an active region, and a gate electrode including a comb structure disposed in a gate region between the sourc...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SUN, Xiguo, ZHANG, Hui, LIU, Shenghou, CAI, Wenbi
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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