HIGH ELECTRON MOBILITY TRANSISTOR DEVICE AND METHOD OF MAKING THE SAME

An HEMT device includes a substrate, a buffer layer, a channel layer, and a barrier layer sequentially disposed in such order; a source electrode and a drain electrode disposed oppositely on an active region, and a gate electrode including a comb structure disposed in a gate region between the source electrode and the drain electrode. The comb structure includes a comb stem portion and a plurality of comb tooth portions. The comb tooth portions are spaced apart from each other in a gate width direction. The comb stem portion is disposed on the barrier layer. Distances between the comb tooth portions in the gate width direction are unequal and irregular. The comb tooth portions penetrate into the barrier layer to equal depths, and the depths are no smaller than half of a thickness of the barrier layer. A method for making the HEMT device is also provided.