SEMICONDUCTOR DEVICE HAVING INTER-METAL DIELECTRIC PATTERNS AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE HAVING INTER-METAL DIELECTRIC PATTERNS AND METHOD FOR FABRICATING THE SAME

A semiconductor device includes a patterned metal layer on a substrate, via conductors on the patterned metal layer, first inter-metal dielectric (IMD) patterns embedded in the patterned metal layer, and a second IMD pattern surrounding the patterned metal layer. Preferably, the first IMD patterns a...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Gu, Hailong, GUO, BIN, Tan, Wen Yi, Huang, Chin-Chun
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device includes a patterned metal layer on a substrate, via conductors on the patterned metal layer, first inter-metal dielectric (IMD) patterns embedded in the patterned metal layer, and a second IMD pattern surrounding the patterned metal layer. Preferably, the first IMD patterns are between and without overlapping the via conductors in a top view.