ELECTRICAL CONNECTION AND ITS METHOD OF FABRICATION

The present description concerns a manufacturing method comprising the following steps: providing a silicon substrate having a via penetrating into the substrate from its front surface and comprising a silicon conductive core and a silicon oxide insulating sheath; etching the substrate from its rear surface, selectively over the sheath so that a portion of said at least one via protrudes from the rear surface; depositing a silicon oxide insulating layer on the rear surface; polishing the insulating layer to expose the core while leaving in place a portion of the thickness of the insulating layer; and forming a conductive electrode in contact with the core.