SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

According to one embodiment, a semiconductor device includes a semiconductor substrate having a first surface. The semiconductor substrate has therein a first region. The first region is at the first surface and contains a dopant of a first conductivity type. A first contact contacts the first regio...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: ODA, Minoru, IWASAKI, Taichi
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
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Beschreibung
Zusammenfassung:According to one embodiment, a semiconductor device includes a semiconductor substrate having a first surface. The semiconductor substrate has therein a first region. The first region is at the first surface and contains a dopant of a first conductivity type. A first contact contacts the first region at the first surface. The first contact has a first metal layer that contacts the first region, a second metal layer covering the first metal layer, and a third metal layer covering the second metal layer.