METHOD FOR CONTACTING A POWER SEMICONDUCTOR ON A SUBSTRATE

METHOD FOR CONTACTING A POWER SEMICONDUCTOR ON A SUBSTRATE

A method for contacting a power semiconductor device on a substrate is disclosed. In order to achieve improved switching behavior and a higher maximum current density, the power semiconductor device has, on a side facing the substrate, at least two contact regions which are electrically isolated fro...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Wagner, Claus Florian, WOITON, MICHAEL
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method for contacting a power semiconductor device on a substrate is disclosed. In order to achieve improved switching behavior and a higher maximum current density, the power semiconductor device has, on a side facing the substrate, at least two contact regions which are electrically isolated from one another, and which are connected by a material bond to the substrate by a structured, in particular metal, connecting layer which includes at least two sintered layers.