ACTIVE METAL FUSES FOR DC-EOS AND SURGE PROTECTION

A method comprises: forming a first metallization layer on a semiconductor die, the first metallization layer including a metal fuse; and forming a second metallization layer on the first metallization layer, in which the second metallization layer includes a thermal conductor spaced from the metal...

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Bibliographische Detailangaben
Hauptverfasser: Radhakrishna, Ujwal, Rai, Vinod Kuniganahalli, Ramadass, Yogesh K
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A method comprises: forming a first metallization layer on a semiconductor die, the first metallization layer including a metal fuse; and forming a second metallization layer on the first metallization layer, in which the second metallization layer includes a thermal conductor spaced from the metal fuse, and the first metallization layer is between the second metallization layer and the semiconductor die.