SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME

A semiconductor device includes a first semiconductor structure including a first substrate and a second semiconductor structure on the first semiconductor structure. The second semiconductor structure includes gate electrodes stacked on the second substrate, interlayer insulating layers alternately stacked with the gate electrodes, through-insulating regions passing through the gate electrodes in a second region, a capping insulating layer covering the gate electrodes and the interlayer insulating layers, an upper insulating layer on the capping insulating layer, channel structures passing through the capping insulating layer and the gate electrodes in a first region, upper contact plugs passing through the upper insulating layer, bit lines on the upper insulating layer, first contact plugs passing through the capping insulating layer, and conductive patterns including second contact plugs passing through each of the through-insulating regions in the second region. The conductive patterns include connection portions integral with the second contact plugs.